China News Service, Baoding, February 28 (China News, Gong Hongyu of Finance) Currently, 5G technology and new energy vehicles are developing rapidly.
Whether it is 5G chips or the main drive and charging systems of new energy vehicles, they are inseparable from the application of third-generation semiconductor materials, that is, silicon carbide single crystal substrates.
Hebei Tongguang Semiconductor Co., Ltd., located in Baoding High-tech Development Zone, is an enterprise engaged in the research, development, production and sales of third-generation semiconductor material silicon carbide substrates.
At present, Tongguang Co., Ltd. has prepared 4/6-inch conductive and high-purity semi-insulating silicon carbide single crystal substrates and 8-inch conductive silicon carbide single crystal substrates, and the products have reached the international advanced level.
The 8-inch conductive silicon carbide single crystal substrate developed by Tongguang Co., Ltd.
Photo by Gong Hongyu
Tongguang Co., Ltd., founded in 2012, has achieved leapfrog development in just over ten years. Behind this, the company has taken advantage of the "east wind" of the coordinated development of Beijing, Tianjin and Hebei.
"Tongguang initially set up its R&D center in Beijing, and took advantage of the opportunity to establish a R&D center in Beijing to introduce a group of high-tech talents. With talents, technology and advanced equipment, Tongguang has made high-quality silicon carbide single crystal substrate." Liu Likun, deputy general manager of Tongguang Co., Ltd., said recently in an interview with the media group of the "Beijing-Tianjin-Hebei coordinated development 10th anniversary online theme promotion event".
In 2014, the Academician Workstation of Tongguang Co., Ltd. was completed, introducing three academicians including Li Shushen, and thus opened the door to in-depth cooperation with the Institute of Semiconductors, Chinese Academy of Sciences.
Leveraging Beijing's talent and scientific research advantages, Tongguang has achieved rapid progress in technological innovation.
Amid the wave of industrial relocation in the Beijing-Tianjin-Hebei region, Tongguang Co., Ltd. moved its R&D center from Beijing back to Baoding.
This is not only due to the company's mass production needs, but also benefits from the coordinated development of transportation, public services and other fields in the Beijing-Tianjin-Hebei region.
"For the company, the convenient transportation, industrial transfer and talent flow in Beijing-Tianjin-Hebei are complementary to each other. Now the high-speed rail from Beijing, Tianjin to Baoding is becoming more and more convenient, and Baoding's medical settlement and reimbursement are also connected with Beijing and Tianjin, making it convenient The company goes to Beijing and Tianjin to recruit talents. Now we go to Beijing and Tianjin every year to recruit fresh graduates," said Liu Likun.
It is worth mentioning that although Tongguang Co., Ltd.’s R&D center has moved away from Beijing, with the convenience of the coordinated development of Beijing, Tianjin and Hebei, Tongguang has more scientific research cooperation with Beijing and Tianjin.
In 2017, Tongguang Technology joined forces with Hebei University, Institute of Semiconductors of the Chinese Academy of Sciences, Peking University, Tsinghua University, and Hebei University of Technology to build a third-generation semiconductor material testing platform, which effectively promoted the aggregation of scientific and technological innovation elements in Beijing, Tianjin, and Hebei and promoted scientific and technological innovation resources. The integrated openness and co-construction and sharing have filled the gap in the third-generation professional testing platform for semiconductor materials in Hebei Province.
With the support of human resources in Beijing, Tianjin and Hebei, Tongguang Technology continues to achieve new breakthroughs in the preparation level of silicon carbide single crystal substrates.
"Although our products are so thin, the technical content is very high. From 4 inches to 6 inches and then to 8 inches, behind every increase in the area of single crystal substrates is a huge technological progress." Liu Likun said that currently, The company's 8-inch silicon carbide single crystal substrate has achieved a technological breakthrough, and new products can be quickly put on the market as the downstream industry transitions to 8-inch large-scale production.
At the same time, as a beneficiary of the coordinated development of Beijing-Tianjin-Hebei, Tongguang Co., Ltd. has also established a joint R&D platform based on the principle of "collaborating with Beijing-Tianjin-Hebei and deeply integrating industry, academia and research".
In addition to the third-generation semiconductor material testing platform, Tongguang also cooperated with the Institute of Semiconductors of the Chinese Academy of Sciences to establish the "Third-Generation Semiconductor Industry Technology Research Institute" to promote scientific research collaboration to a new level.
"Currently, the company is actively introducing senior technical and management talents from Beijing and Tianjin, guiding new doctors to join the company's postdoctoral research station, and promoting new doctors to become the backbone of the team through joint training between the Institute of Semiconductors of the Chinese Academy of Sciences and the company," Liu Likun said.
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