Economic Daily-China Economic Net News reporter Zhang Yi reported: The first domestic new generation large-size integrated circuit silicon single crystal growth equipment jointly developed by Xi'an University of Technology and Xi'an Eswell Silicon Technology Co., Ltd. has achieved a trial production in Xi'an recently success.
It is reported that large-size semiconductor silicon single crystal materials are a "stuck neck" problem that restricts the development of my country's integrated circuit industry.
A breakthrough in this field is of great significance to meet the development of my country's integrated circuit industry.
Since 2018, the team of Professor Liu Ding of Xi'an University of Technology has worked closely with Xi'an Eswell Silicon Wafer Technology Co., Ltd. to carry out technical research and successfully developed high-quality silicon single crystal materials with a diameter of 300 mm and a length of 2,100 mm.
It has achieved a breakthrough in successfully drawing large-size, high-quality integrated circuit-level silicon single crystal materials with self-developed domestic equipment.