IBM and Samsung have announced a breakthrough in chip design, with transistors stacked vertically, as opposed to the flat structure of current SoCs.
With current processors and SoCs, transistors are laid out flat on the surface of silicon and electric current flows laterally from one transistor to another.
In vertical transport field effect transistors (VTFETs), the transistors are placed perpendicular to each other and current flows vertically.
According to IBM and Samsung, this design should overcome the current limitations of IBM's nanosheets.
This should give your choice of advantages in terms of performance or autonomy.
The two manufacturers estimate that VTFETs will lead to processors which will be either twice as fast or 85% less energy-consuming than current transistors (FinFETs).
IBM and Samsung have also said it could lead to smartphones that can last a full week on a single charge, or make even very strenuous tasks, such as mining cryptocurrency, more efficient.
A collaboration for the innovations of tomorrow
“Today's tech announcement aims to challenge convention and rethink how we continue to move society forward and deliver new innovations that improve lives, business and reduce our environmental impact,” says Mukesh. Khare, VP Hybrid Cloud and Systems at IBM Research.
“IBM and Samsung demonstrate their commitment to jointly innovate in semiconductor design and jointly pursue what we call 'hard tech'”.
The two companies have not yet mentioned any date concerning the arrival of this new structure of transistors.
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